Power transistor gate driver

ABSTRACT

The present invention relates to a gate driver for a power transistor comprising a first charging path operatively connected between a first voltage supply and a gate terminal of the power transistor for charging the gate terminal to a first gate voltage. A second charging path is connectable between the gate terminal of the power transistor and a second supply voltage to charge the gate terminal from the first gate voltage to a second gate voltage larger or higher than the first gate voltage. A voltage of the second voltage supply is higher than a voltage of the first voltage supply.

The present invention relates to a gate driver for a power transistorcomprising a first charging path operatively connected between a firstvoltage supply and a gate terminal of the power transistor for chargingthe gate terminal to a first gate voltage. A second charging path isconnectable between the gate terminal of the power transistor and asecond supply voltage to charge the gate terminal from the first gatevoltage to a second gate voltage larger or higher than the first gatevoltage. A voltage of the second voltage supply is higher than a voltageof the first voltage supply. Another aspect of the invention relates toa load driving assembly comprising a plurality of gate driverselectrically coupled to respective ones of a plurality of powertransistors. The load driving assembly may be utilized in various poweramplification applications such as class D audio amplifiers.

BACKGROUND OF THE INVENTION

Gate drivers for power transistors of a power or output stage of Class Daudio amplifiers are well-known in the art. The power transistors oftencomprise N-channel field effect transistors such as NMOSs or IGBTs whichare popular semiconductor components for the purpose due to their smallON resistance for given footprint or area consumption on a semiconductorsubstrate. Since the manufacturing costs of a semiconductor substrateare closely linked to its area, area reduction is an effective manner toreduce costs.

However, the design of suitable gate drivers for such N-channel fieldeffect transistors is challenging for various reasons such as a need toraise an instantaneous gate voltage considerably above a drain voltageof the N-channel field effect transistor during operation of the powerstage. The high instantaneous gate voltage is needed to turn theN-channel field effect transistor fully on. Placing the N-channel fieldeffect transistor in its fully on-state or conducting state allows it toexhibit low on-resistance and minimize conductive power losses. Sincethe drain terminal of an outmost power transistor of a power stage in aClass D audio amplifier is connected to the highest DC supply voltageimmediately available, often in form of a positive DC power supplyvoltage or rail, the instantaneous gate voltage must be raisedconsiderably above this highest DC supply voltage for a duration of theon-state or conducting state of the power transistor in question.Bootstrap techniques and circuitry are known in the art for generatingsuch high gate voltages in each gate driver. However, these rely on apre-charged capacitor for supplying the gate drive voltage to theN-channel field effect transistor of the power stage. When thepre-charged bootstrap capacitor is connected to a gate terminal of anN-channel field effect transistor, its voltage is significantly reducedby the intrinsic gate capacitance of the N-channel field effecttransistor due to charge sharing unless the bootstrap capacitance of thebootstrap capacitor is much larger such as 10 or 20 times larger thanthe intrinsic gate capacitance. However, the intrinsic gate capacitanceof suitable N-channel field effect transistors for many types of powerstages may be quite large such as several hundred pF, which leads toimpractically large capacitance values for integrated bootstrapcapacitors of acceptable dimensions, i.e. capacitance values rangingfrom several nF to more than 20 nF following the above-mentioned rule ofthumb. As an alternative, the bootstrap capacitor can be providedexternally to a semiconductor die holding the gate driver or drivers.However, this solution is undesirable since power stage topologies suchas multi-level H-bridge power stages typically comprises a plurality ofcascade or stacked power transistors with associated gate drivers thateach need an external bootstrap capacitor. Such a plurality of externalbootstrap capacitors adds to the costs of a complete Class D amplifiersolution, requires allocation of valuable printed circuit board spaceand presents a potential reliability hazard.

Accordingly, gate drivers for power transistors, in particular N-channelfield effect transistors, capable of raising the gate voltage above thepositive DC power supply voltage or rail with a minimal need forexternal capacitors are highly desirable. In addition, a high powerefficiency of the gate driver would be a significant advantage innumerous applications such as class D audio amplifiers for portableand/or battery operated communication and entertainment equipment suchas mobile phones, MP3 players etc.

SUMMARY OF INVENTION

A first aspect of the invention relates to a gate driver for a powertransistor. The gate driver comprises a first charging path electricallyconnectable between a first voltage supply and a gate terminal of thepower transistor for charging the gate terminal to a first gate voltage.A second charging path is electrically connectable between a secondvoltage supply and the gate terminal of the power transistor forcharging the gate terminal from the first gate voltage to a second gatevoltage larger than the first gate voltage. A voltage of the secondvoltage supply is higher than a voltage of the first voltage supply.

This application of two separate charging paths for charging the gateterminal of the power transistor has the advantage that a major portionsuch as more than 50%, or 75%, or even more preferably more than 90%, ofa total electrical charge required to raise the gate voltage to thesecond gate voltage can be delivered by a power efficient DC powersupply comprising the first voltage supply. In this manner, only theresidual portion of the total charge need to be supplied by a less powerefficient high voltage supply comprising the second voltage supply. Thehigh voltage is typically supplied by a voltage pump or voltagemultiplier capable of raising the high voltage supply to a voltage levelabove the highest otherwise available positive DC supply voltage. Aspreviously explained, the high voltage level delivered by the highvoltage supply is required at the gate input or terminal of an N-channelfield effect transistor (FET) to switch the N-channel FET into itsconducting state. The first and second charging paths may both beoperative to supply charging current to the gate terminal of the powertransistor when the gate voltage is below the first gate voltage but thecharging current supplied through the first charging path is preferablymuch larger than the charging current supplied through the secondcharging path in this situation. In one preferred embodiment, thecharging current delivered by the second charging path to the gateterminal of the power transistor is substantially zero or insignificant,such as less than 10 pA or 1 pA, when the gate voltage is below thefirst gate voltage. This may for example be achieved by arranging acontrollable MOS transistor switch in series in the second charging pathwhere the very large off-resistance of the MOS transistor switch can beused to essentially disrupt any flow of charging current through thesecond charging path. When the gate voltage of the power transistor isabove the first gate voltage the supply of charging current through thefirst charging path is preferably essentially zero because of theconnection of the first charging path to the first voltage supply whichmay have a voltage level close to a level of the first gate voltage. Thelevel of the first gate voltage is preferably set to about the samelevel as the voltage level of the first voltage supply to maximize theamount of charging current supplied by the first charging before thegate voltage of the power transistor reaches the voltage level of thefirst voltage supply. At that condition, the first charging path isunable of supplying further charging current to the gate terminal due toa reversal of the flow of charging current. Consequently, the furthersupply of charging current to the gate terminal so as to raise the gatevoltage of the power transistor from the first gate voltage to thesecond gate voltage is effected through the second charging path. Sincea distal node of the second charging path is connected to the secondsupply voltage which is higher than both first supply voltage and thefirst gate voltage, charging current can at least flow from the secondsupply voltage to the gate terminal of the power transistor until thegate voltage is close to the second supply voltage.

The present gate driver is highly useful to drive a gate of an N-channelFET of a switched power stage or load driver. The present gate drivermay be utilized for single-ended or H-bridge load driving circuits of aclass-D audio amplifier. The class D audio amplifier may comprise2-level class AD or BD PDM or multi-level PWM in various power stagetopologies.

According to a preferred embodiment, the first voltage supply comprisesa drain voltage of the power transistor so as to provide an electricalcoupling from a drain terminal of the power transistor to its gateterminal through the first charging path. In some embodiments, the drainterminal of the power transistor may be coupled directly to a positiveDC supply voltage of an output stage comprising the power transistor. Inother embodiments, the drain terminal of the power transistor may becoupled to an intermediate supply voltage such as a drain terminalcoupled to flying capacitor in a multi-level PWM output stage topologywhere the drain terminal voltage level is set by a voltage of the flyingcapacitor. The gate driver may be adapted to operate across a wide rangeof DC supply voltages, i.e. a voltage difference between the secondsupply voltage and the lowest supply voltage of the gate driver,depending on requirements of a particular application. In a range ofuseful applications, the DC supply voltage may be set to value between 5Volt and 120 Volt. The DC supply voltage may be provided as a unipolaror bipolar DC voltage for example +40 Volt or +1-20 Volt relative to aground reference, GND.

The gate driver preferably comprises a voltage multiplier or charge pumpadapted to generate the second voltage supply based on a DC supplyvoltage of the gate driver. The DC supply voltage may for examplecomprise a normal CMOS power supply rail with a DC voltage between 3.0and 5.0 Volt. The voltage multiplier or charge pump may charge a flyingcapacitor to the latter DC voltage and stack the charged capacitor ontop of the first supply voltage to thereby generate a second supplyvoltage which is between 3 and 5 V higher than the first supply voltage.

The gate driver preferably comprises a controllable discharge pathadapted to switch the power transistor to an off-state or non-conductingstate where the controllable discharge path is connectable between thegate terminal of the power transistor and a source terminal of the powertransistor. The discharge path may comprise a MOS switch that isswitched between its conducting and non-conducing state by manipulationof its gate voltage. The discharge path ensures that the powertransistor can rapidly brought into its non-conducting state by removingthe charge on the gate terminal supplied through the first and secondcharging paths to switch the power transistor ON as explained above.

According to yet another preferred embodiment, the gate driver comprisesa controller or sequencer adapted to control supply of charging currentto the gate terminal through the first charging path and control supplyof charging current to the gate terminal through the second chargingpath. The controller may, optionally, control the off-state and on-stateof the controllable discharge path. The controller may be a relativelysimple circuit based on combinational logic operating asynchronously toany clock signal available to the gate driver. In this embodiment thecontroller may operate according to a self-timed mechanism and comprisea handful of appropriately configured transistors and circuitry todefine a voltage level of the first voltage. However, in otherembodiments, the controller may comprise clocked sequential logicoperating synchronously to a master or other system clock signalavailable to the gate driver. In the latter embodiment, the controllermay for example comprise programmable logic circuitry or a softwareprogrammable or hard-wired Digital Signal Processor (DSP) or generalpurpose microprocessor.

In one embodiment, a predetermined threshold voltage is provided to thecontroller to set the first voltage and the controller is adapted tocontrol the supply of charging currents to the gate terminal through thefirst and second charging paths by comparing the gate voltage of thepower transistor with the predetermined threshold voltage. Thepredetermined threshold voltage may for example be derived from a drainvoltage of a power transistor electrically coupled to the first chargingpath. The predetermined threshold voltage may be set to a voltage levelabout one MOS threshold voltage below a drain voltage of the powertransistor. In practice, the predetermined threshold voltage will thentypically be situated between 0.5 and 1.0 V below a drain voltage of thepower transistor. This embodiment allows the first voltage of a givengate driver to be conveniently adapted to the actual voltage level ofits associated power transistor.

In another embodiment, the first voltage may be defined by a timingscheme rather a particular preset threshold voltage. According to thetiming based scheme, the controller is adapted to supply chargingcurrent to the gate terminal of the power transistor through the firstcharging path for a predetermined charging time period, such as acharging time period between 5 and 100 nanoseconds, to reach the firstgate voltage. Subsequently, the controller supplies charging current tothe gate terminal through the second charging path for a predeterminedtime period. An approximate charging time period may be computed basedon knowledge of an approximate impedance of the first charging path andan approximate value of the capacitance at the gate terminal of thepower transistor. This capacitance will typically comprise capacitancecontributions for the gate terminal and the gate to drain capacitance.

The flow of charging current through each of the first and secondcharging paths may conveniently be controlled by a series-coupled switchelement for example embodied as a controllable semiconductor switch suchas a FET transistor controlled by the controller or sequencer. Thecontrollable FET transistor may comprise one or more NMOS or PMOStransistor(s) which conveniently may be integrated on a semiconductorsubstrate and exhibit low on-resistance and high off-resistance.

In one embodiment, the controller is adapted to disrupt the supply ofcharging current from the second voltage supply until the gate voltagereaches the first gate voltage. This scheme is advantageous because itusually ensures that a major portion of the required charge to the gateterminal is delivered by a power efficient first voltage supply such asa positive DC power supply. Consequently, only a relatively smallfraction of the entire gate charge is supplied by a less power efficienthigh voltage supply providing the second voltage supply.

The voltage or voltage level of the second voltage supply is preferablyat least one gate-to-source voltage drop of the power transistor higherthan a voltage of the first voltage supply during a conducting state oron-state of the power transistor. To ensure that the voltage level ofthe second voltage supply is sufficiently high to ensure the powertransistor is appropriately placed in its conducting state, the voltageof the second voltage supply may be at least 2 Volt, preferably 3 Volt,or even more preferably 5 Volt, higher than the voltage of the firstvoltage supply during a conducting state or on-state of the powertransistor.

The first charging path is preferably adapted to charge the gateterminal of the power transistor to the first gate voltage in less than100 nanoseconds, preferably less than 50 nanoseconds, or even morepreferred less than 20 nanoseconds. This range of charging times arewell-suited for controlling switched power transistors of a power stageoperating with PWM or PDM switching frequencies in the range 100 kHz to10 MHz.

Since the voltage level of the first voltage supply may fluctuateconsiderably during operation of the gate driver, the second voltagesupply is preferably adapted such that it is at least 2.5 Volt higherthan the voltage on first voltage supply at all times during operationof the gate driver. This ensures that sufficient voltage is alwaysavailable for switching the power transistor to its conducting state andmaintaining the power transistor therein during the intended operationof the gate driver.

In a particularly advantageous embodiment of the invention relates to aload driving assembly comprising a plurality of gate drivers accordingto any of the above described embodiments thereof. The load drivingassembly further comprises a plurality of power transistors each havinga gate terminal electrically connected to a first node of the firstcharging path and to a first node of the second charging path of a gatedriver. A drain terminal of each power transistor is electricallycoupled to a second node of the first charging path to provide the firstsupply voltage for the power transistor. A plurality of assembly inputterminals is coupled to respective inputs of the plurality of gatedrivers to supply modulated input signals thereto. The plurality ofpower transistors are coupled in cascade with an upper leg formedbetween a first DC supply voltage and an output terminal and a lower legformed between the output terminal and the second DC supply voltage suchthat the output terminal is electrically coupled between the upper andlower legs.

The load driving assembly may be connected directly to a loudspeakerload coupled to the output terminal. The load driving assembly may forexample comprise between 2 and 8 cascaded power transistors each havingits drain and gate terminals coupled to a separate gate driver.According to a preferred embodiment of the load driving assembly, thesecond voltage supplies of the plurality of gate drivers areelectrically connected to a common charge pump capacitor of the secondvoltage supply. This embodiment allows the plurality of second chargingpaths to receive their respective charging currents from a single sharedhigh voltage supply requiring only a single capacitor. Consequently,since a typical load driving assembly may comprise more than 4 cascadedpower transistor such as 6, 8 or even more, the ability to share thesecond voltage from a single capacitor based high voltage supply reducesthe need for bootstrap capacitor to drive the gate terminals of thepower transistors. So despite the common charge pump capacitor may havea considerable capacitance value such as between 10 nF and 100 nF, whichrequires it to be an external component to the load driving assembly,only a single capacitor component is required.

The present load driving assembly is particularly useful for applicationin multi-level PWM or PDM output or power stages because of theirutilization of multiple stacked or cascaded power transistors. The loaddriving assembly may be adapted to operate at a DC voltage differencebetween 5 Volt and 120 Volt between the first and second DC supplyvoltages. According to one embodiment of the load driving assembly,adapted for use as a multi-level PWM power stage, a DC voltage source isconfigured to set a predetermined DC voltage difference between a firstnode, situated between a pair of cascaded power transistors of the upperleg and a second node, situated between a pair cascaded powertransistors of the lower leg. The DC voltage source may convenientlycomprise at least one device or component selected from a group of {acharged capacitor, a floating DC supply rail, a battery}. Thepredetermined DC voltage difference is preferably substantially equal toone half of a DC voltage difference between the first and second DCsupply voltages so as to enable the generation of a 3-level outputsignal at the output terminal. In one embodiment, the DC voltage sourcecomprises a charged capacitor with a capacitance between 100 nF and 10pF. The plurality of power transistors preferably comprises at least oneN-channel field effect transistor such as a NMOS or IGBT deposited onsemiconductor substrate such as Silicon, Gallium Nitride or SiliconCarbide. Preferably, all power transistors of the load driving assemblyare embodied as N-channel field effect transistor.

According to yet another advantageous embodiment of the invention, theload driving assembly is formed or integrated on a semiconductorsubstrate such as CMOS integrated circuit, preferably in a semiconductorprocess that supports high voltage devices. The semiconductor substrateprovides a robust and low-cost single chip solution for the manufactureof the load driving assembly which is particularly well-suited forhigh-volume consumer oriented audio applications, such as TV sets,mobile phones and MP3 players, where cost is an essential parameter. Thesemiconductor substrate preferably comprises a voltage supply terminalproviding electrical connection to the external charge pump capacitoracting as an energy reservoir for the second voltage supply.

Another aspect of the invention relates to a class D audio amplifiercomprising one of the above-described embodiments of the load drivingassembly. As previously mentioned, the Class D audio amplifier maycomprise modulators for two-level or multi-level PWM or PDM.

BRIEF DESCRIPTION OF THE DRAWINGS

A preferred embodiment of the invention is described in more detailbelow in connection with the appended drawings, in which:

FIG. 1 is a schematic diagram of a load driving assembly comprising aplurality of gate drivers in accordance with a preferred embodiment ofthe invention and electrically coupled to respective gate terminals of aplurality of power transistors,

FIG. 2 is a schematic diagram of a single gate driver coupled to a gateterminal of an associated power transistor in accordance with thepreferred embodiment,

FIG. 3 is a mixed block and transistor level diagram of the single gatedriver depicted schematically on FIGS. 1 and 2; and

FIG. 4 is a is a schematic diagram of a load driving assembly comprisinga plurality of gate drivers in accordance with a second preferredembodiment electrically coupled to respective gate terminals of aplurality of power transistors.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 illustrates schematically a load driving assembly 100 connectedto a loudspeaker load 133. The load driving assembly 100 comprises agate driving circuit 101 comprising four individual gate drivers 111,113, 115, 117 in accordance with a preferred embodiment of the presentinvention. Each of the gate drivers has an output terminal electricallyconnected to a gate terminal of one of NMOS transistors SW1, SW2, SW3,SW4. The NMOS transistors SW1, SW2, SW3, SW4 are coupled in cascadebetween a first or positive DC supply voltage V_(S) and a second DCsupply voltage in form of ground, GND. The cascaded NMOS transistorsSW1, SW2, SW3, SW4 form a load driver for the loudspeaker load 133coupled to an output terminal V_(PWM) of the load driver through a loadinductor 137 and a load capacitor 135. The combined operation of theload capacitor and load inductor 135, 137, respectively, is to providelowpass filtering of a multi-level pulse width modulated output signalwaveform provided at the output terminal V_(PWM) so as to suppresscarrier or switching frequency components in an audio signal across theloudspeaker load 133.

In the present embodiment of the invention, the gate driving circuit 101and the load driver, comprising cascaded NMOS power transistors SW1,SW2, SW3, SW4, are integrated on a common semiconductor substrate or diesuch that the depicted electrical connections between each of the gatedrivers 111, 113, 115, 117 and its associated NMOS power transistor isprovided on the semiconductor substrate. However, the skilled personwill understand that the load driver may be formed as an entirelyseparate circuit from the gate driving circuit 101, for example as aseparate semiconductor substrate or integrated circuit. In the latterembodiment, the depicted electrical connections between each of the gatedrivers 111, 113, 115, 117 and its associated NMOS transistor may beprovided by electrical traces on a printed circuit board (PCB), ceramicsubstrate or similar carrier. The skilled person will appreciate thateach of the cascaded NMOS transistors SW1, SW2, SW3, SW4 may be composedof a single MOS transistor as schematically illustrated on FIG. 1 or mayin other embodiments of the invention comprise a plurality of smallerparallelly coupled individual NMOs transistors.

The skilled person will understand that the depicted single-endedmulti-level load driving assembly 100 could be expanded to provide anH-bridge load driving assembly based on a pair of essentially identicalload driving circuit assemblies 100 connected to opposite terminals ofthe loudspeaker load 133. Likewise, the skilled person will understandthat the four gate drivers 111, 113, 115, 117 could be used to drivegate terminals of other topologies of switched power stages such as PDMor 2-level class AD or BD PWM modulation.

In the present embodiment, the load driver comprises an upper leg Awhich comprises the pair of cascaded NMOS transistors SW1, SW2 while alower leg B comprises the pair of cascaded NMOS transistors SW3, SW4.The cascaded NMOS transistors SW1, SW2 are coupled to V_(S) at a drainterminal of SW1 and to the output terminal or node V_(PWM) at a sourceterminal of SW2. The NMOS transistor SW3 has its drain terminal coupledto the output terminal or node V_(PWM) and a source terminal of SW4 iscoupled to GND. The load driver furthermore comprises a chargedso-called flying capacitor C_(fly) 125 that enables the generation of athird output level midway between V_(S) and GND at the output nodeV_(PWM) to provide a multi-level PWM signal as explained in furtherdetail in the applicant's co-pending U.S. patent application No.61/407,262. During operation of the load driving assembly 100, a signalgenerator or modulator is configured to apply first, second, third andfourth pulse width modulated control signals of appropriate amplitudeand phase to first, second, third and fourth inputs PWM_1, PWM_2, PWM_3,PWM_4, of the gate drivers 111, 113, 115, 117, respectively, so as tocontrolling respective states of the cascaded NMOS transistors SW1, SW2,SW3, SW4. Thereby, each of the NMOS transistors SW1-SW4 toggles orswitches between ON-states and OFF-states in accordance with transitionsof the pulse width modulated control signal in question. Theon-resistance of each NMOS transistors SW1, SW2, SW3, SW4 in itsON-state/conducting state may vary considerably according torequirements of a particular application, in particular an impedance ofthe loudspeaker load 133 or an impedance of another type of inductiveand/or capacitive load. In the present embodiment each of the NMOStransistors is preferably designed such that its on-resistance liesbetween 0.01 and 5 ohm such as between 0.05 and 0.5 ohm.

The load driving assembly 100 comprises a voltage multiplier or chargepump 120, HV_(boot), adapted to generate a high voltage supply based ona positive DC supply voltage V_(S). The positive DC supply voltage V_(S)may vary widely, for example between 5 and 100 Volts, according torequirements of particular applications but in the present embodiment ofthe invention it is fixed at about 40 Volt. The high voltage generatedby the charge pump 120 is preferably set to voltage about 5 Volt higherthan the positive DC supply voltage V_(S) and distributed to each of thegate drivers 111, 113, 115, 117. In each gate driver, the high voltageis utilized to generate a gate drive signal or gate voltage above thepositive DC supply voltage V_(S) so as to drive each of the NMOStransistors SW1, SW2, SW3, SW4 into a low-resistance conducting state inaccordance with the first, second, third and fourth pulse widthmodulated control signals, respectively, as explained in further detailbelow. A power supply or pump capacitor 123, C_(boot), which is coupledto the high voltage supply at one end and to the positive DC supplyvoltage at the opposite end to provide an energy reservoir for the highvoltage supply, HV_(boot). The charge pump 120 comprises a flyingcapacitor (not shown) that intermittently is charged to a voltage ofabout 3 Volt or 5 Volt above ground from a suitable DC supply voltage ofthe load driving assembly 100. The flying capacitor is intermittentlydisconnected from the DC supply voltage and electrically connected toC_(boot) to dump acquired charge thereon and thereby raise the highvoltage at HV_(boot) to approximately 3 Volt or 5 Volts above thepositive DC supply voltage V_(S) The power supply capacitor 123 mayeither be an external component to the load driving assembly 100 orintegrated on the semiconductor substrate holding the gate drivercircuit 101 depending on size and cost requirements dictated by aparticular application. The capacitance of an external power supplycapacitor 123 is preferably set to a value between 10 nF and 100 nF.

As illustrated, each of the gate drivers 111, 113, 115, 117 comprisesthree separate electrical connections to the drain, gate and sourcenodes, respectively, of respective ones of the NMOS transistors SW1,SW2, SW3, SW4. For the uppermost gate driver 111, GD1, electricalconductors 119, 121 and 122 connect to the drain, gate and source nodesof NMOS transistor SW1. The gate terminal of SW1 is charged through twoindependent charging paths, i.e. a first charging path and a secondcharging path, provided within the gate driver GD1 as explained infurther detail below with reference to FIGS. 2 and 3.

FIG. 2 is a schematic diagram of a single gate driver 111 (GD1) coupledto the gate terminal of a power transistor. The gate driver 111comprises the previously-mentioned input for a pulse width modulatedaudio signal PWM_1. The pulse width modulated audio signal is applied toa level shifter 203 that can shift a DC voltage level of the pulse widthmodulated audio signal and/or increase an amplitude thereof to providean output signal suitable for driving the NMOS power transistor SW1through the residual gate driver circuitry. The output signal is appliedto a controller or sequencer 205 which is adapted to control supply ofcharging current to the gate terminal 121 through a first charging path211 and control supply of charging current to the gate terminal 121through a second charging path 209. In addition, the controller orsequencer 205 is adapted to control the OFF-state and ON-state of acontrollable discharge path 207 electrically connected between the gateterminal 121 and the source terminal 122 of the NMOS power transistorSW1. Charging current is supplied from the drain terminal 119 to thegate terminal 121 through the first charging path 211 in accordance withcontrol signal from the controller 205. Since the drain terminal of SW1is electrically coupled to the positive DC supply voltage V_(S) thecharging current is supplied from a low impedance voltage source withample of power. In the present embodiment, the controller 205 is adaptedto control the supply of charging currents to the gate terminal throughthe first and second charging paths by comparing a gate voltage on thegate terminal 121 with a predetermined threshold voltage. When the gatevoltage is below predetermined threshold voltage, the controller 205enables the first charging path 211 and disrupts the supply of chargingcurrent from the high voltage supply, HV_(boot), through the secondcharging path 209. Once the gate voltage reaches the predeterminedthreshold voltage, the first charging path 211 is disrupted ordisconnected by the controller 205 and the second charging path 209enabled such that additional charging current is supplied to the gateterminal from the high voltage supply via the second charging path 209.In this manner, the second charging path 209 is able to lift or raisethe gate voltage of the NMOS power transistor SW1 considerably above thepositive DC supply voltage. The threshold voltage may in practice beselected quite freely and defined by any one of several differentmechanisms. However, in the present embodiment, the predeterminedthreshold voltage of each gate driver is derived from the drain voltageof the associated NMOS power transistor. The predetermined thresholdvoltage is fixed at approximately a single MOS transistor thresholdvoltage below the drain voltage of the NMOS power in question. Thissingle threshold voltage may correspond to a voltage between 0.5 and 1.5Volt for typical CMOS integrated circuit technologies. It is generallyadvantageous to set the predetermined threshold voltage close to thedrain voltage of the associated power transistor. This setting ensuresthe power transistor is operating close to its conducting state orON-state when the drain voltage approximately equals the gate voltage.This scheme normally ensures that a major portion of the required chargecurrent to the gate terminal is delivered by the power efficient DCpower supply of the output stage, i.e. the positive DC supply voltageV_(S) in the present embodiment, while only a relatively small fractionof the entire gate charge current is supplied by the less powerefficient high voltage supply. The time period for charging the gateterminal of the NMOS power transistor SW1 to approximately the voltageof high voltage supply, HV_(boot), may be lie between 1 and 20 ns. Oncethe NMOS power transistor SW1 has been switched to its conducting stateby the combined operation of the first and second charging paths itremains in that state for a time period defined by the pulse width ofthe pulse width modulated audio signal PWM_1. When a down going edge ortransition is detected in the pulse width modulated audio signal by thecontroller 205 the discharge path 207 is activated so as to effectivelyshort the gate terminal 121 to the source terminal 122 by a lowresistance path. Consequently, the activation of the discharge path 207discharges the gate voltage and switches the NMOS power transistor SW1to a non-conducting state.

FIG. 3 is a mixed block and transistor level diagram of the single gatedriver 111, GD1, depicted schematically on FIGS. 1 and 2. The firstcharging path 211 and the second charging path 209 on FIG. 2 are heredepicted on transistor level while the level shifter 203 and a linearvoltage regulator 330 are depicted as circuit blocks for simplicity. Theskilled person will appreciate that the controller 205 of FIG. 2 isformed by the MOS transistors P1, N3, N4, and N5. The gate driver 111 isimplemented as a floating circuit block relative to ground and iswell-suited for integration in a high voltage portion of a CMOSsemiconductor substrate such as within a high voltage isolation well.The linear voltage regulator 330 or LDO is coupled to the high voltagesupply, HV_(boot), and preferably adapted to generate a regulated DCsupply between 3 Volt and 5 Volt between output terminals V_(REG1) andV_(REG2.) A start current, for example between 0.1 and 1 mA, is suppliedthrough input I_(s) to start-up or boot the linear voltage regulator330. The operation of the first charging path 211 is controlled throughswitching of the NMOS transistor N1 which is controllable bymanipulation or steering of its gate terminal. The gate terminal of N1is coupled to a drain of NMOS transistor N4 such that N4 is able toswitch N1 between its conducting and non-conducting state. N4 iscontrolled by the output signal of the level shifter 203 which outputsignal is a pulse width modulated audio signal switching betweenregulated voltage levels of V_(REG1) and V_(REG2) as previouslyexplained. When the output signal is logic low, i.e. the voltageV_(REG2), N1 is placed in its conducting state because N4 isnon-conducting or OFF while P1 is conducting and thereby pulling thegate terminal of N1 towards V_(REG1) to provide a positive gate-sourcevoltage to N1. Since N1 is conducting, the gate terminal of NMOS powertransistor SW1 is charged by charging current supplied from the positiveDC supply voltage V_(S) through N1 and forward biased series connecteddiode D1. Due to a substantial capacitance, such as between 50 pF and500 pF or about 100 pF, of the gate terminal of N1 in the presentembodiment of the invention, the charging current may reach peak valuesof 150 mA or more. The charging current raises the gate voltage on thegate terminal of NMOS transistor SW1 until it reaches a voltage aboutone diode drop below the positive DC supply voltage which also is equalto the drain voltage of SW1 in the present gate driver 111. ThereafterN1 switches to a non-conducting state since the gate-source voltageapproaches zero. This voltage is accordingly a threshold voltage. Duringthe time period where the gate terminal of SW1 is charged through thefirst charging path, the second charging path which comprises NMOStransistor N2 is also active to supplying charging current to the gateterminal of SW1 because N2 is placed in a conducting state by the PMOStransistor P1 which pulls a gate terminal of N2 to the regulated supplyvoltage V_(REG1). However, forward biased diode D2, possibly combinedwith the relative sizes of N1 and N2, ensures that the gate-sourcevoltage drop across N2 is significantly smaller than the gate-sourcevoltage drop across N1 so as to ensure that a majority of the chargingcurrent to the gate terminal of SW1 is supplied through N1 or the firstcharging path when the gate voltage of SW1 is below the above-mentionedthreshold voltage. A total charge between 1 and 10 nC may be provided tothe gate terminal of SW1 to fully charge it. This total charge isconsumed to both charge the gate source capacitance and a gate-draincapacitance of SW1.

Once the gate voltage on SW1 has reached the threshold voltage N1 isswitched to its non-conducting state while NMOS transistor N2 ismaintained in its conducing state. Consequently, further chargingcurrent is supplied to the gate terminal 121 of SW1 from the highvoltage supply, HV_(boot) through the drain source terminals of N2arranged in the second charging path. The high voltage supply, HV_(boot)has a substantially higher voltage than the positive DC supply voltageV_(S) for example between 3 and 5 Volt higher, preferably about 4.5 Voltin the present embodiment. During charging of the gate terminal 121 ofSW1 through N2, the diode D1 blocks any unintended flow of currentthrough N1 back to the positive DC supply voltage connected to the drainof SW1. The gate terminal of SW1 is accordingly charged through N2 untilit reaches a voltage about one diode drop, i.e. about 0.5-0.8 Volt,below the regulated voltage V_(REG1) due to forward biased diode D2.Consequently, the gate terminal of SW1 is raised to a voltageapproximately equalling one diode drop below the regulated voltageV_(REG1) and since the latter voltage is approximately equal to thevoltage level of the high voltage supply, HV_(boot), the gate voltage ofSW1 is driven to a level about 4 Volt above the positive supply voltage.Thus, allowing SW1 to be fully conducting and thereby exhibiting a verylow on-resistance.

When SW1 has been turned on or conducting, by the above-describedoperation of the first and second charging paths, for a certain timeperiod set by the pulse width of the output signal of the level shifter203, the output signal abruptly changes to logic high or the voltagelevel set by V_(REG1). In response SW1 is to be switched to itsnon-conducting state and the supply of charging current through both N1and N2 to be disrupted. This function is achieved because P1 switches toits non-conducting state in response to a logic high signal at theoutput of the level shifter 203 and N4 switches to its conducting statebecause the gate-source voltage across this NMOS device is forced toabout 4.5 Volt which is the difference between the regulated voltagesupply terminals as previously mentioned. N4 in turn pulls the gate ofN1 down to V_(REG2) which switches N1 to a non-conducting state sinceits gate-source voltage approaches zero. The non-conducting state of N1disrupts the first charging path to cut off the supply of chargingcurrent to the gate terminal of SW1. Simultaneously, N3 pulls the gateof N2 down to the voltage V_(REG2) which switches N2 to itsnon-conducting state since its gate-source voltage across this MOStransistor also approaches zero and therefore disrupts the secondcharging path. Thus, the supply of charging current to the gate terminalof SW1 through this path is also disrupted. Finally, the gate and sourceof SW1 is short circuited by N5 that is switched to its conducting stateby the logic high level applied at its gate terminal. Thereby, SW1 isswitched to its non-conducting or OFF-state and charge on the gateterminal removed.

The skilled person will understand that the controller 205 in thepresent embodiment of the invention is a relatively simple but effectivecircuit based on combinational logic operating asynchronously to anyclock signal of the load driving assembly. However, the skilled personwill understand that the controller can be implemented in other ways forexample using clocked sequential logic operating synchronously to amaster or other system clock signal available to the load drivingassembly. In the latter embodiment, the controller 205 may for examplecomprise a software programmable or hard-wired Digital Signal Processor(DSP) or general purpose microprocessor.

FIG. 4 is a is a schematic diagram of a load driving assembly 400comprising a plurality of gate drivers GD1, GD2, GD3, GD4 411, 413, 415and 417, respectively, in accordance with a second preferred embodimentof the invention. The load driver 403 comprises a cascade of four NMOSpower transistors SW1, SW2, SW3, SW4 similar to that described inconnection with the first embodiment of the invention. Furthermore, theplurality of gate drivers GD1, GD2, GD3, GD4 in the present load drivingassembly embodiment has the same overall topology as the gate driversGD1, GD2, GD3, GD4 previously described in detail in connection with thefirst preferred embodiment of the invention. However, in the presentembodiment the LDOs 330 (FIG. 3) of each gate driver has been replacedwith a bootstrap ladder circuit comprising cascaded transistor switchessw433, sw435, sw437, sw439 and bootstrap capacitors C_(b1), C_(b2),C_(b3) and C_(b4). The bootstrap ladder is more power efficient than theLDOs because conduction of current in each of the transistor switches isavoided while there exists any significant voltage drop across theswitch. Thus, current conduction in a transistor switch is preferablyavoided when the voltage drop across the switch in question is above 0.5Volt or above 1.0 Volt. Each of the transistor switches sw433, sw435,sw437, sw439 is placed in its conducting state by a suitable controlsignal when the associated gate driver is active to drive the power NMOStransistor. The cascaded transistor switches sw433, sw435, sw437, sw439are electrically coupled between a low voltage DC supply, V_(DD), andhigh voltage supply, HV_(boot), provided through power line conductor431 and similar to the previously described high voltage supply. Thehigh voltage supply, HV_(boot), includes supply capacitor C_(boot) 423.The low voltage DC supply, V_(DD), may in practice be derived from anavailable normal DC power supply for CMOS logic circuitry of a class-Damplifier comprising the present load driving assembly 400 for example a1.8, 3.3 or 5 Volt DC power supply. The lowermost gate driver GD4 issupplied with power directly from this DC power supply as illustratedand the output voltage of the DC power supply utilized high voltagesupply for a second charging path of this gate driver. This is possiblebecause the gate input of the power transistor SW4 does not need to beraised or driven to a voltage above the positive DC supply voltage V_(S)to switch SW4 into a conducting state. The drain of SW4 is only chargedto about one-half of V_(S) as a consequence of the utilized multi-leveloutput stage topology around C_(fly) 425. The uppermost gate driver GD1is supplied by a high voltage supply HV_(boot) through transistor switchSW433, or by Cb2 through transistor switch sw435. The inclusion of SW433provides an extra voltage supply input to the bootstrap ladder so as toreducing a total capacitance required for the bootstrap capacitorsC_(b1), C_(b2), C_(b3) and C_(b4).

1. A gate driver for a power transistor, comprising: a first chargingpath electrically connectable between a first voltage supply and a gateterminal of the power transistor for charging the gate terminal to afirst gate voltage; and a second charging path electrically connectablebetween a second voltage supply and the gate terminal of the powertransistor for charging the gate terminal from the first gate voltage toa second gate voltage larger than the first gate voltage, wherein avoltage of the second voltage supply is higher than a voltage of thefirst voltage supply.
 2. A gate driver according to claim 1, wherein thefirst voltage supply comprises a drain voltage of the power transistor.3. A gate driver according to claim 1, comprising a voltage or chargepump adapted to generate the second voltage supply based on a DC supplyvoltage of the gate driver.
 4. A gate driver according to claim 1,further comprising a controllable discharge path adapted to switch thepower transistor to an OFF-state/non-conducting state, wherein thecontrollable discharge path is connectable between the gate terminal ofthe power transistor and a source terminal of the power transistor.
 5. Agate driver according to claim 1, comprising a controller or sequenceradapted to control supply of charging current to the gate terminalthrough the first charging path and control supply of charging currentto the gate terminal through the second charging path, and optionally,the OFF-state and ON-state of the controllable discharge path.
 6. A gatedriver according to claim 5, wherein the controller or sequencer isadapted to control the supply of charging currents to the gate terminalof the power transistor through the first and second charging paths bycomparing the gate voltage of the power transistor with a predeterminedthreshold voltage.
 7. A gate driver according to claim 6, wherein thecontroller or sequencer is adapted to derive the predetermined thresholdvoltage from a drain voltage of the power transistor electricallycoupled to the first charging path.
 8. A gate driver according to claim5, wherein the controller or sequencer is adapted to: supply chargingcurrent to the gate terminal of the power transistor through the firstcharging path for a predetermined charging time period such as a timeperiod between 5 and 100 nanoseconds to reach the first gate voltage;and subsequently supply charging current to the gate terminal of thepower transistor through the second charging path for a predeterminedtime period.
 9. A gate driver according to claim 5, wherein each of thefirst and second charging paths comprises a controllable seriesconnected FET transistor controlled by the controller or sequencer. 10.A gate driver according to claim 6, wherein the controller or sequenceris adapted to disrupt the supply of charging current from the secondvoltage supply until the gate voltage reaches the first gate voltage.11. A gate driver according to claim 1, wherein the voltage of thesecond voltage supply is at least one gate-to-source voltage drop of thepower transistor higher than a voltage of the first voltage supplyduring a conducting state or ON-state of the power transistor.
 12. Agate driver according to claim 1, wherein the voltage of the secondvoltage supply is at least 2 Volts higher than the voltage of the firstvoltage supply during a conducting state or ON-state of the powertransistor.
 13. A gate driver according to claim 1, wherein the firstcharging path is adapted to charge the gate terminal to the first gatevoltage in less than 100 nanoseconds.
 14. A gate driver according toclaim 1, wherein the voltage level on the second voltage supply is atleast 2.5 Volt higher than the voltage level on the first voltage supplyat all times during operation of the gate driver.
 15. A load drivingassembly, comprising: a plurality of gate drivers according to claim 1;a plurality of power transistors each having a gate terminalelectrically connected to a first node of the first charging path and toa first node of the second charging path of a gate driver; a drainterminal of each power transistor being electrically coupled to a secondnode of the first charging path to provide the first supply voltage forthe power transistor; a plurality of assembly input terminals coupled torespective inputs of the plurality of gate drivers to supply modulatedinput signals thereto; the plurality of power transistors being coupledin cascade with an upper leg formed between a first DC supply voltageand an output terminal and a lower leg formed between the outputterminal and the second DC supply voltage; and the output terminal beingelectrically coupled between the upper and lower legs.
 16. A loaddriving assembly according to claim 15, further comprising: a DC voltagesource configured to set a predetermined DC voltage difference between afirst node, situated between a pair of cascaded power transistors of theupper leg, and a second node, situated between a pair cascaded powertransistors of the lower leg.
 17. A load driving assembly according toclaim 16, wherein the DC voltage sources comprises at least one deviceor component selected from a group consisting of a charged capacitor, afloating DC supply rail, and a battery.
 18. A load driving assemblyaccording to claim 17, wherein the DC voltage source comprises a chargedcapacitor with a capacitance between 100 nF and 10 μF.
 19. A loaddriving assembly according to claim 17, wherein the predetermined DCvoltage difference is substantially equal to one half of a DC voltagedifference between the first and second DC supply voltages so as toenable the generation of a 3-level output signal at the output terminal.20. A load driving assembly according to claim 15, adapted to operate ata DC voltage difference between 5 Volt and 120 Volt between the firstand second DC supply voltages.
 21. A load driving assembly according toclaim 15, wherein the plurality of power transistors comprise at leastone N-channel field effect transistor such as a NMOS or IGBT depositedon semiconductor substrate such as Silicon, Gallium Nitride or SiliconCarbide.
 22. A load driving assembly according to claim 15, wherein thesecond voltage supplies of the plurality of gate drivers areelectrically connected to a common charge pump capacitor of the secondvoltage supply.
 23. A semiconductor substrate comprising a load drivingassembly according to claim 15 coupled to an external charge pumpcapacitor.
 24. A class D audio amplifier comprising: a load drivingassembly according to claim 15.